PIIPM15P12D007
I27179 22 - Sep
Switching Characteristics: Inverter and Brake
For proper operation the device should be used within the recommended conditions.
T J = 25°C (unless otherwise specified)
Symbol
Q g
Q ge
Q gc
E on
E off
E tot
E on
E off
E tot
td (on)
Tr
td (off)
Tf
Parameter Definition
Total Gate Charge (turn on)
Gate – Emitter Charge (turn on)
Gate – Collector Charge (turn on)
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Turn on delay time
Rise time
Turn off delay time
Fall time
Min
Typ
84
10
43
838
632
1470
1154
933
2087
98
14
132
226
Max
127
15
64
1207
900
2107
1512
1030
2542
104
25
142
247
Units
nC
μ J
μ J
ns
Test Conditions
I C = 15A
V CC = 600V
V GE = 15V
I C = 15A, V CC = 600V, T J = 25 oC
V GE = 15V, R G =10 ?, L = 500 μ H
Tail and Diode Rev. Recovery included
I C = 15A, V CC = 600V, T J = 125 oC
V GE = 15V, R G =10 ?, L = 500 μ H
Tail and Diode Rev. Recovery included
I C = 15A, V CC = 600V, T J = 125 oC
V GE = 15V, R G =10 ?, L = 500 μ H
Fig.
23
CT1
CT4
WF1
WF2
13,
15
CT4
WF1
WF2
14,16
CT4
WF1
WF2
C ies
Input Capacitance
1323
V CC = 30V
C oes
C res
RBSOA
SCSOA
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
10
255
37
FULL SQUARE
pF
μ s
V GE = 0V
f = 1MHz
T J = 150 oC, I C =60A, V GE = 15V to 0V
V CC = 1000V, V p = 1200V, R G = 5 ?
T J = 150 oC, V GE = 15V to 0V
V CC = 1000V, Vp= 1200V, R G = 5 ?
22
4
CT2
CT3
WF4
E REC
Trr
Irr
Diode reverse recovery energy
Diode reverse recovery time
Peak reverse recovery current
711
113
36
1263
300
41
μ J
ns
A
T J = 125 oC
I F = 15A, V CC = 600V,
V GE = 15V, R G =10 ?, L = 500 μ H
17,18
19,20
21
CT4
WF3
Rth J-C_T
Each IGBT to copper plate thermal resistance
0.9
oC/W
Rth J-C_D
Rth C-H
Each Diode to copper plate thermal resistance
Module copper plate to heat sink thermal
resistance. Silicon grease applied = 0.1mm
1.54
0.03
oC/W
oC/W
See also fig. 25, 26
25,26
29
I C = 2A, V DC = 530V, fsw = 8kHz, T C = 55 oC
PD1
Pdiss
Total Dissipated Power
42
81
W
I C = 3A, V DC = 530V, fsw = 8kHz, T C = 55 oC
I C = 3A, V DC = 530V, fsw = 16kHz T C = 55 oC,
PD2
www.irf.com
40
I C = 7A, V DC = 530V, fsw = 4kHz, T C = 55oC
PD3
8
相关PDF资料
PLE0E821MCO6 CAP ALUM 820UF 2.5V 20% RADIAL
PLF0E681MDO1 CAP ALUM 680UF 2.5V 20% RADIAL
PLG0E392MD01 CAP ALUM 3900UF 2.5V 20% RADIAL
PLV1K100MCL1TD CAP ALUM 10UF 80V 20% RADIAL
PLX1C151MCL1TD CAP ALUM 150UF 16V 20% RADIAL
PM0603-R27J INDUCTOR CHIP .27UH 5% SMD
PM0805-R39K INDUCTOR CHIP .39UH 10% SMT
PM1008-8R2K INDUCTOR CHIP 8.2UH 10% SMD
相关代理商/技术参数
PIIPM25P12B008 制造商:未知厂家 制造商全称:未知厂家 功能描述:Programmable solated intelligent power module. a 25A. 1200V. three-phase inverter for 15kW industrial and servo motors with on-board programmable DSP. current sensing. isolation. gate drivers and power stage.
PIIPM25P12B008X 功能描述:IC PWR MODULE PROG ISO 25A 1200V RoHS:否 类别:编程器,开发系统 >> 过时/停产零件编号 系列:- 标准包装:1 系列:*
PIIPM50E06A004 制造商:IRF 制造商全称:International Rectifier 功能描述:Programmable Isolated IPM
PIIPM50E06A004X 制造商:IRF 制造商全称:International Rectifier 功能描述:Programmable Isolated IPM
PIIPM50E06B004 制造商:IRF 制造商全称:International Rectifier 功能描述:Programmable Isolated IPM
PIIPM50E06B004X 制造商:IRF 制造商全称:International Rectifier 功能描述:Programmable Isolated IPM
PIIPM50E06C004 制造商:IRF 制造商全称:International Rectifier 功能描述:Programmable Isolated IPM
PIIPM50E06C004X 制造商:IRF 制造商全称:International Rectifier 功能描述:Programmable Isolated IPM